View BGA2011_1219329.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
MBD128
BGA2011 900 MHz high linear low noise amplifier
Product specification Supersedes data of 2000 Sep 06 2000 Dec 04
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
FEATURES * Low current, low voltage * High linearity * High power gain * Low noise * Integrated temperature compensated biasing * Control pin for adjustment bias current. APPLICATIONS * RF front end * Low noise amplifiers, e.g. CDMA, PHs, Dect, etc. DESCRIPTION Silicon Monolitic Microwave Integrated Circuit (MMIC) amplifier consisting of an NPN double polysilicon transistor with integrated biasing for low voltage applications in a 6-pin SOT363 plastic SMD package.
handbook, halfpage
BGA2011
PINNING PIN 1 2 3 4 5, 6 RF in VC VS RF out GND DESCRIPTION
VS 5 4
6
RF out VC 1 2 3
MBL251
BIAS CIRCUIT
Top view
RF in
GND
Marking code:A5-
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA SYMBOL VS IS IC |s21|2 NF PARAMETER DC supply voltage DC supply current DC control current insertion power gain noise figure VC = VS in application circuit, see Fig.2; f = 900 MHz IS = 15 mA; f = 900 MHz CONDITIONS RF input AC coupled 3 15 0.11 19 1.7 TYP. - - - - MAX. 4.5 UNIT V mA mA dB dB
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL VS VC IS IC Ptot Tstg Tj PARAMETER DC supply voltage voltage on control pin supply current control current total power dissipation storage temperature operating junction temperature Ts 100 C forced by DC voltage on RF input CONDITIONS RF input AC coupled - - - - - -65 - MIN. MAX. 4.5 VS 30 0.25 135 +150 150 UNIT V V mA mA mW C C
2000 Dec 04
2
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS Ptot = 135 mW; Ts 100 C VALUE 350
BGA2011
UNIT K/W
CHARACTERISTICS RF input AC coupled; VS = 3 V; IS = 15 mA; f = 900 MHz; Tj = 25 C; unless otherwise specified. SYMBOL IS IC RL IN PARAMETER supply current control current return losses input typical application; see Fig.2 high IP3 (see Fig.2; stripline = 0 mm) high IP3 (see Fig.2; stripline = 1.5 mm) RL OUT return losses output typical application; see Fig.2 high IP3 (see Fig.2; stripline = 0 mm) high IP3 (see Fig.2; stripline = 1.5 mm) |s21|2 insertion power gain typical application; see Fig.2 high IP3 (see Fig.2; stripline = 0 mm) high IP3 (see Fig.2; stripline = 1.5 mm) NF noise figure typical application; see Fig.2; IS = 15 mA high IP3 (see Fig.2; stripline = 0 mm) high IP3 (see Fig.2; stripline = 1.5 mm) IP3in input intercept point typical application; see Fig.2 high IP3 (see Fig.2; stripline = 0 mm) high IP3 (see Fig.2; stripline = 1.5 mm) CONDITIONS - - - - - - - - - - - - - - - - MIN. 10 TYP. 15 0.11 -11 -11 -17 -11 -12 -14 15 19 16 1.5 1.6 1.7 -2 4 10 MAX. 20 - - - - - - - - - - - - - - - - UNIT mA mA dB dB dB dB dB dB dB dB dB dB dB dB dBm dBm dBm
2000 Dec 04
3
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
APPLICATION INFORMATION
BGA2011
handbook, full pagewidth
VS VC VC C5 BIAS CIRCUIT
VS C4 L2 C2 C3
C1 RF in IN L1 C6 stripline SOT363
OUT
RF out
MLD480
GND
Fig.2 Application circuit.
List of components (see Fig.2) COMPONENT C1, C2 C3, C5 C4 C6 L1 L2 Note 1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (r = 6.15), board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m. DESCRIPTION multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor SMD inductor SMD inductor TYPICAL APPLICATION 100 pF 22 nF 5.6 pF - - - HIGH IP3 APPLICATION 100 pF 22 nF 5.6 pF 2 x 100 nF 10 nH 8.2 nH DIMENSIONS 0603 0603 0603 0805 0603 0603
2000 Dec 04
4
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
handbook, halfpage
30
MLD481
handbook, halfpage
20
MLD482
20 IS (mA)
gain (dB) 20
gain (dB) 15 Gmax 10 s21 2 IS s21 2 IS
15
10
10 5 5
0 0 1000 2000 f (MHz) 3000
0 0 1 2 VC (V) 3
0
IC = 15 mA; VS = VC = 3 V; PD = -30 dBm; Zo = 50 .
f = 900 MHz; VS = 3 V; PD = -30 dBm.
Fig.3
Insertion gain (|s21|2) and Gmax as functions of frequency; typical values.
Fig.4
Insertion gain and supply current as functions of control voltage; typical values.
handbook, halfpage s2
20
MLD483
handbook, halfpage
15
MLD484
0 IP3in (dBm) -5
21 (dB)
IP3out (dBm) 10
15 IP3in
10 IP3out
5 5
-10
0 10-3
10-2
IC (mA)
10-1
0 5 10 IS (mA)
-15 15
VS = VC = 3 V; PD = -30 dBm (both tones); f = 900 MHz; f = 100 kHz. f = 900 MHz; VS = 4 V; PD = -30 dBm.
Fig.6
Fig.5
Insertion gain as a function of control current; typical values.
Output and input 3rd order intercept point as a function of supply current; typical application; typical values.
2000 Dec 04
5
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
handbook, halfpage
2
MLD485
NF (dB) 1.6
1.2
0.8
0.4
0 5 10 IS (mA) 15
VS = VC = 3 V; f = 900 MHz.
Fig.7
Noise figure as a function of supply current; typical values.
Scattering parameters VS = VC = 3 V; PD = -30 dBm; Zo = 50 ; Tamb = 25 C f (MHz) 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 s11 MAGNITUDE (ratio) 0.553 0.499 0.394 0.331 0.295 0.276 0.267 0.262 0.270 0.287 0.309 0.339 0.360 0.390 0.398 0.392 ANGLE (deg) -22.45 -42.12 -71.44 -90.58 -104.0 -114.9 -124.2 -134.2 -144.2 -152.7 -159.7 -166.2 -172.0 -175.9 178.0 173.9 s21 MAGNITUDE (ratio) 16.198 14.354 10.688 8.156 6.512 5.415 4.640 4.112 3.659 3.336 3.045 2.849 2.680 2.511 2.332 2.108 ANGLE (deg) 160.5 145.4 124.6 112.2 103.9 97.72 93.01 89.10 85.21 82.21 78.21 73.94 69.19 64.60 59.20 56.72 s12 MAGNITUDE (ratio) 0.006 0.012 0.018 0.021 0.024 0.027 0.032 0.037 0.043 0.049 0.057 0.066 0.076 0.086 0.094 0.099 ANGLE (deg) 76.72 67.53 59.55 58.29 60.91 64.65 69.04 73.22 75.43 77.84 78.60 77.96 75.04 74.92 69.95 69.12 s22 MAGNITUDE (ratio) 0.115 0.184 0.256 0.283 0.293 0.298 0.304 0.310 0.311 0.309 0.312 0.304 0.291 0.292 0.278 0.317 ANGLE (deg) -87.98 -113.5 -141.2 -158.1 -170.5 178.7 169.5 162.5 157.0 152.7 150.5 149.6 151.4 149.2 148.4 140.0
2000 Dec 04
6
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
handbook, full pagewidth
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 180 0 0.2 0.5 3 GHz 100 MHz -0.2 900 MHz -5 1 2 5 0 0
+0.2
+5
-0.5 -135 -1
-2
-45
MLD486
1.0
-90 IC = 15 mA; VS = VC = 3 V; PD = -30 dBm; Zo = 50 .
Fig.8 Common emitter input reflection coefficient (s11); typical values.
handbook, full pagewidth
90
135
45
500 MHz 100 MHz 900 MHz 1.8 GHz 3 GHz 0
20 180
16
12
8
4
-135
-45
-90 IC = 15 mA; VS = VC = 3 V; PD = -30 dBm; Zo = 50 .
MLD487
Fig.9 Common emitter forward transmission coefficient (s21); typical values.
2000 Dec 04
7
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
handbook, full pagewidth
90
135
45
3 GHz 20 180 100 MHz 16 12 8 4 0
-135
-45
-90 IC = 15 mA; VS = VC = 3 V; PD = -30 dBm; Zo = 50 .
MLD488
Fig.10 Common emitter reverse transmission coefficient (s12); typical values.
handbook, full pagewidth
90 +1 135 +0.5 +2 45 1.0 0.8 0.6 0.4 0.2 2 100 MHz -5 5 0 900 MHz 0
+0.2 3 GHz 180 0 0.2 0.5 1
+5
-0.2
-0.5 -135 -1
-2
-45
MLD489
1.0
-90 IC = 15 mA; VS = VC = 3 V; PD = -30 dBm; Zo = 50 .
Fig.11 Common emitter output reflection coefficient (s22); typical values.
2000 Dec 04
8
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
PACKAGE OUTLINE Plastic surface mounted package; 6 leads
BGA2011
SOT363
D
B
E
A
X
y
HE
vMA
6
5
4
Q
pin 1 index
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT363
REFERENCES IEC JEDEC EIAJ SC-88
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2000 Dec 04
9
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
DATA SHEET STATUS DATA SHEET STATUS Objective specification PRODUCT STATUS Development DEFINITIONS (1)
BGA2011
This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product.
Preliminary specification
Qualification
Product specification
Production
Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified
2000 Dec 04
10
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
NOTES
BGA2011
2000 Dec 04
11
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 68 9211, Fax. +359 2 68 9102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381, Fax. +1 800 943 0087 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V, Tel. +45 33 29 3333, Fax. +45 33 29 3905 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615 800, Fax. +358 9 6158 0920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 4099 6161, Fax. +33 1 4099 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 2353 60, Fax. +49 40 2353 6300 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: PT Philips Development Corporation, Semiconductors Division, Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510, Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080 Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Via Casati, 23 - 20052 MONZA (MI), Tel. +39 039 203 6838, Fax +39 039 203 6800 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5057 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Al.Jerozolimskie 195 B, 02-222 WARSAW, Tel. +48 22 5710 000, Fax. +48 22 5710 001 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 58088 Newville 2114, Tel. +27 11 471 5401, Fax. +27 11 471 5398 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 93 301 6312, Fax. +34 93 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 5985 2000, Fax. +46 8 5985 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2741 Fax. +41 1 488 3263 Taiwan: Philips Semiconductors, 5F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2451, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 60/14 MOO 11, Bangna Trad Road KM. 3, Bagna, BANGKOK 10260, Tel. +66 2 361 7910, Fax. +66 2 398 3447 Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye, ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381, Fax. +1 800 943 0087 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors, Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 2000
Internet: http://www.semiconductors.philips.com
SCA 70
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/02/pp12
Date of release: 2000
Dec 04
Document order number:
9397 750 07678

▲Up To Search▲

Price & Availability of BGA2011

	To Download BGA2011 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .